? semiconductor components industries, llc, 2004 february, 2004 ? rev. 2 1 publication order number: 2n5087/d 2n5087 preferred device amplifier transistor pnp silicon features ? pb?free package is available* maximum ratings rating symbol value unit collector?emitter voltage v ceo 50 vdc collector?base voltage v cbo 50 vdc emitter?base voltage v ebo 3.0 vdc collector current ? continuous i c 50 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w http://onsemi.com preferred devices are recommended choices for future use and best overall value. device package shipping 2 ordering information 2n5087 to?92 5000 units/bulk 2n5087g to?92 (pb?free) 5000 units/tubes to?92 (t o?226) case 29 style 1 collector 3 2 base 1 emitter 2N5087RLRA to?92 2000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 3 2 1 2n5087 = device code y = year ww = work week marking diagram 2n 5087 yww
2n5087 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)ceo 50 ? vdc collector?base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 50 ? vdc collector cutoff current (v cb = 35 vdc, i e = 0) i cbo ? 50 nadc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? 50 nadc on characteristics dc current gain (i c = 100 adc, v ce = 5.0 vdc) (i c = 1.0 madc, v ce = 5.0 vdc) (i c = 10 madc, v ce = 5.0 vdc) (1) h fe 250 250 250 800 ? ? ? collector? emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) v ce(sat) ? 0.3 vdc base?emitter on voltage (i c = 1.0 madc, v ce = 5.0 vdc) v be(on) ? 0.85 vdc small?signal characteristics current?gain e bandwidth product (i c = 500 adc, v ce = 5.0 vdc, f = 20 mhz) f t 40 ? mhz collector?base capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb ? 4.0 pf small?signal current gain (i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz) h fe 250 900 ? noise figure (i c = 20 adc, v ce = 5.0 vdc, r s = 1.0 k , f = 1.0 khz) (i c = 100 adc, v ce = 5.0 vdc, r s = 3.0 k , f = 1.0 khz) nf ? ? 2.0 2.0 db 1. pulse test: pulse width 300 s, duty cycle 2.0%.
2n5087 http://onsemi.com 3 typical noise characteristics (v ce = ? 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 2. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 bandwidth = 1.0 hz r s 0 i c = 10 a 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 a 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 3. narrow band, 100 hz i c , collector current ( a) figure 4. narrow band, 1.0 khz i c , collector current ( a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the transistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman's constant (1.38 x 10 ?23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db
2n5087 http://onsemi.com 4 typical static characteristics figure 6. dc current gain i c , collector current (ma) 400 0.003 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 7. collector saturation region i c , collector current (ma) 1.4 figure 8. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 9. aono voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t a = 25 c i c = 1.0 ma 10 ma 100 ma figure 10. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 400 a 350 a 300 a 250 a 200 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c) q 150 a 100 a 50 a
2n5087 http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 11. turn?on time i c , collector current (ma) 500 figure 12. turn?off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 13. current?gain e bandwidth product i c , collector current (ma) figure 14. capacitance v r , reverse voltage (volts) figure 15. input impedance i c , collector current (ma) figure 16. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) w 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 v ce = -10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -100 t j = 25 c
2n5087 http://onsemi.com 6 figure 17. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an?569) z ja(t) = r(t) r ja t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 19 figure 18. active?region safe operating area t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 19. typical collector leakage current v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 19. using the model and the device thermal response the normalized effective transient thermal resistance of figure 17 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 17 by the steady state value r ja . example: the 2n5087 is dissipating 2.0 watts peak under the follow- ing conditions: t 1 = 1.0 ms, t 2 = 5.0 ms (d = 0.2) using figure 17 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88 c. for more information, see on semiconductor application note an569/d, available from the literature distribution center or on our website at www.onsemi.com . the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 18 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 17. at high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 - 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 v cc = 30 v i ceo i cbo and i cex @ v be(off) = 3.0 v t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 s
2n5087 http://onsemi.com 7 package dimensions case 29?11 issue al to?92 (to?226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
2n5087 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n5087/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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